Semiconductor device with enhanced mobility and method

ABSTRACT

In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional application of U.S. applicationSer. No. 13/895,197 entitled SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITYAND METHOD filed May 15, 2013 and issued as U.S. Pat. No. 8,878,286 onNov. 4, 2014, which is a continuation of U.S. application Ser. No.13/159,255 entitled semiconductor device with enhanced mobility andmethod filed Jun. 13, 2011 and issued as U.S. Pat. No. 8,466,513 on Jun.18, 2013, which are incorporated herein by reference in their entiretyto provide continuity of disclosure.

BACKGROUND OF THE INVENTION

This document relates generally to semiconductor devices, and morespecifically to insulated gate structures and methods of formation.

Metal oxide field effect transistor (MOSFET) devices are used in manypower switching applications such as dc-dc converters. In a typicalMOSFET, a gate electrode provides turn-on and turn-off control with theapplication of an appropriate gate voltage. By way of example, in ann-type enhancement mode MOSFET, turn-on occurs when a conductive n-typeinversion layer (i.e., channel region) is formed in a p-type body regionin response to the application of a positive gate voltage, which exceedsan inherent threshold voltage. The inversion layer connects n-typesource regions to n-type drain regions and allows for majority carrierconduction between these regions.

There is a class of MOSFET devices where the gate electrode is formed ina trench that extends downward from a major surface of a semiconductormaterial such as silicon. Current flow in this class of devices isprimarily vertical and, as a result, device cells can be more denselypacked. All else being equal, this increases the current carryingcapability and reduces on-resistance of the device.

Achieving the lowest specific on-resistance (ohm-area) is an importantgoal of MOSFET device designers because it determines product cost andgross margins or profitability. In particular, the lower the specificon-resistance, the smaller the size of the MOSFET die or chip, whichleads to lower costs in semiconductor materials and package structures.

Various methods are known for reducing on-resistance. Such methodsinclude using advanced lithography and self-aligned structures toincrease device density; adding recessed field plates or shieldelectrodes, which allow the use of higher drift region dopantconcentrations; and using thinner and higher dopant concentrationsemiconductor substrates. Also, various packaging techniques have beenimplemented including certain mold compounds that provide stress inducedcarrier mobility enhancement. Additionally, in very low voltage advanceddeep submicron CMOS devices (less than 5 volts) used in logicapplications, enhanced carrier mobility has been achieved in planar gatestructures by encapsulating the outer and upper surfaces of the gateelectrode and portions of the outer surfaces of the source and drainregions with a stressed silicon-nitride film. Further, lattice mismatchsemiconductor structures such as silicon-germanium devices have beenproposed to enhance carrier mobility in power transistor devices, whichin turn reduces on-resistance. However, such structures suffer frommanufacturing drawbacks including lowered thermal budgets andreliability issues.

Accordingly, structures and methods of manufacture are needed toeffectively further reduce on-resistance in power semiconductor devicessuch as vertical trench-gated semiconductor devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a partial cross-sectional view of a semiconductorstructure in accordance with a first embodiment of the presentinvention;

FIG. 2 illustrates a partial cross-sectional view of a semiconductorstructure in accordance with a second embodiment of the presentinvention;

FIG. 3 illustrates a partial cross-sectional view of a semiconductorstructure in accordance with a third embodiment of the presentinvention;

FIG. 4 illustrates a partial cross-sectional view of a semiconductorstructure in accordance with a fourth embodiment of the presentinvention;

FIG. 5 illustrates a partial cross-sectional view of a semiconductorstructure in accordance with a fifth embodiment of the presentinvention;

FIGS. 6-8 illustrate partial cross-sectional views of a semiconductordevice at various stages of fabrication in accordance with a method ofthe present invention;

FIGS. 9-12 illustrate partial cross-sectional views of anothersemiconductor device at various stages of fabrication in accordance withanother method of the present invention; and

FIGS. 13-15 illustrate partial cross-sectional view of a furthersemiconductor device in accordance with the present invention at variousstages of fabrication.

For simplicity and clarity of illustration, elements in the figures arenot necessarily drawn to scale, and the same reference numbers indifferent figures denote generally the same elements. Additionally,descriptions and details of well-known steps and elements may be omittedfor simplicity of the description. As used herein current-carryingelectrode means an element of a device that carries current through thedevice such as a source or a drain of an MOS transistor or an emitter ora collector of a bipolar transistor or a cathode or anode of a diode,and a control electrode means an element of the device that controlscurrent through the device such as a gate of a MOS transistor or a baseof a bipolar transistor. Although the devices are explained herein ascertain N-channel devices, a person of ordinary skill in the art willappreciate that P-channel devices and complementary devices are alsopossible in accordance with the present description. For clarity of thedrawings, doped regions of device structures are illustrated as havinggenerally straight-line edges and precise angular corners. However,those skilled in the art understand that due to the diffusion andactivation of dopants, the edges of doped regions are generally notstraight lines and the corners are not precise angles.

Further, the term “major surface” when used in conjunction with asemiconductor region or substrate means the surface of the semiconductorregion or substrate that forms an interface with another material suchas a dielectric or insulator, a conductor, a polycrystallinesemiconductor. The major surface can have a topography that changes inthe x, y and z directions.

In addition, structures of the present description may embody either acellular base design (where the body regions are a plurality of distinctand separate cellular or stripe regions) or a single base design (wherethe body region is a single region formed in an elongated pattern,typically in a serpentine pattern or a central portion with connectedappendages). However, one embodiment of the present description will bedescribed as a cellular base design throughout the description for easeof understanding. It should be understood that it is intended that thepresent disclosure encompass both a cellular base design and a singlebase design.

DETAILED DESCRIPTION OF THE DRAWINGS

In general, the present description pertains to a power semiconductordevice. In one embodiment the power semiconductor device includes atrench gate electrode structure. In another embodiment the powersemiconductor device can also include a shield electrode structure.Features that induce or propagate stress in predetermined locations ofthe power semiconductor device are formed in spaced relationship withtrench gate electrode structure, the shield electrode structure,adjacent contact regions, regions there between, or combinationsthereof. The features enhance carrier mobility, which in turn improvesdevice performance parameters such as on-resistance.

FIG. 1 shows a partial cross-sectional view of a semiconductor device 10or cell 10 having features or structures configured to create,propagate, induce, or generate stress within predetermined locations orregions of device 10. Device 10, as well as the other devices describedherein, can comprise a plurality of such devices integrated as adiscrete device and/or integrated with other functionality as a powerintegrated circuit.

In this embodiment, device 10 can be configured as a vertical powerMOSFET structure, but it is understood that this description applies aswell to lateral power MOSFET structures, insulated gate bipolartransistors (IGBT), MOS-gated thyristors, and the like. Device 10includes a region of semiconductor material, semiconductor material, orsemiconductor region 11, which can be for example, an n-type siliconsubstrate 12 having a resistivity in a range from about 0.001 ohm-cm toabout 0.005 ohm-cm. Substrate 12 can be doped with phosphorous orarsenic. In the embodiment shown, substrate 12 provides a drain region,drain contact or a first current carrying contact for device 10.

A semiconductor layer, drift region, or extended drain region 14 can beformed in, on, or overlying substrate 12. In one embodiment,semiconductor layer 14 can be formed using semiconductor epitaxialgrowth techniques. Alternatively, semiconductor layer 14 can be formedusing semiconductor doping and diffusion techniques. In an embodimentsuitable for a 50 volt device, semiconductor layer 14 can be n-type witha dopant concentration of about 1.0×10¹⁶ atoms/cm³ and can have athickness from about 3 microns to about 5 microns. The thickness anddopant concentration of semiconductor layer 14 can be increased ordecreased depending on the desired drain-to-source breakdown voltage(BV_(DSS)) rating of device 10. In another embodiment, semiconductorlayer 14 can comprise a plurality of epitaxial layers having differentdopant concentrations and thicknesses. In another embodiment,semiconductor layer 14 can comprises a single epitaxial layer having agraded dopant profile. In an alternate embodiment, the conductivity typeof substrate 12 can be switched to be opposite to the conductivity typeof semiconductor layer 14 to form, for example, an IGBT embodiment.

Device 10 also includes a body, base, or doped region or regions 31extending from a major surface 18 of semiconductor material 11. Bodyregions 31 can have a conductivity type that is opposite to theconductivity type of semiconductor layer 14. In this example, bodyregions 31 are p-type conductivity. Body regions 31 have a dopantconcentration configured for forming inversion layers that operate asconduction channels or channel regions 45 of device 10. Body regions 31can extend from major surface 18 to a depth, for example, from about 0.5microns to about 2.0 microns. In this embodiment, n-type source regions,current conducting regions, or current carrying regions 33 are formedwithin, in, or overlying body regions 31 and can extend from majorsurface 18 to a depth, for example, from about 0.1 microns to about 0.5microns. A p-type body contact, enhancement region, or contact region 36can be formed in body regions 31, and typically is configured to providea lower contact resistance to body regions 31.

Device 10 can further include trench control, trench gate, or trenchstructures 19, which typically extend in a substantially verticaldirection from major surface 18. Alternatively, trench controlstructures 19 or portions thereof can have a tapered shape. Trenchstructures 19 include trenches 22, which can be formed within region ofsemiconductor material 11. For example, trenches 22 can have a depthfrom about 1.5 microns to about 2.5 microns or shallower or deeper. Inone embodiment, trenches 22 can extend all the way through semiconductorlayer 14 into substrate 12. In another embodiment, one or more trenches22 can terminate within semiconductor layer 14.

In this embodiment, dielectric layers, insulator layers, field insulatorlayers or regions 24 are formed on lower portions of trenches 22. In oneembodiment, insulator layers 24 can be silicon oxide, and can have athickness from about 0.1 microns to about 0.2 microns. Additionally, thethickness of layer 24 can be increased or decreased, depending on thedesired drain-to-source breakdown voltage (BV_(DSS)). Shield electrodes21 are formed adjacent insulator layers 24 typically in substantiallycentrally located lower portions of trenches 22. In one embodiment,shield electrodes 21 comprise doped polycrystalline semiconductormaterial. In other embodiments, shield electrodes 21 can comprise otherconductive materials.

Dielectric or insulator layers 26 typically are formed along uppersidewall portions of trenches 22, and can be configured as gatedielectric regions or layers. By way of example, insulator layers 26typically comprise oxide, nitride, tantalum pentoxide, titanium dioxide,barium strontium titanate, hafnium oxide, combinations thereof, or thelike. In one embodiment, insulator layers 26 comprise silicon oxide andcan have a thickness from about 0.01 microns to about 0.1 microns. Inone embodiment, insulator layers 24 can be thicker than insulator layers26. Dielectric or insulator layers 27 typically are formed overlyingshield electrodes 21, and in one embodiment, insulator layers 27 canhave a thickness that is between or greater than the thickness ofinsulator layers 24 and insulator layers 26. In one embodiment,insulator layers 27 can have a thickness greater than the thickness ofinsulator layer 26, which can improve oxide breakdown voltageperformance. In one embodiment, insulator layers 27 can have a thicknessbetween about 0.1 microns to about 0.3 microns.

In this embodiment, trench structures 19 typically include controlelectrodes or gate electrodes 28, which are formed adjacent insulatorlayers 26 and 27. In one embodiment, gate electrodes 28 can comprisedoped polycrystalline semiconductor material such as polysilicon dopedwith an n-type dopant.

Device 10 further includes one or more features such as structures orstressed films 23, 231, 232, and/or 233, which are configured to create,propagate, induce, or generate stress within predetermined locations orregions of device 10. Such predetermined locations can include channelregions 45 and/or drift regions 17. By way of example, structures 23,231, 232, and 233 comprise a stressed film or stress inducing film suchas dielectric films including a silicon nitride, a silicon oxynitride,or a silicon oxide, combinations thereof, or the like. Alternatively,structures 23, 231, 232, and 233 can comprise conductive films such assilicides or metals. In further embodiments, such structures cancomprise undoped polysilicon, semi-insulating polysilicon (“SIPOS”), orthe like.

In one embodiment, structures 23 can be formed within gate electrodes 28and in proximity to channel regions 45. In one embodiment, structures 23can be substantially centrally located within gate electrodes 28. In oneembodiment, structures 23 can be placed less than or equal toapproximately 0.2 microns from channel regions 45. By way of example,structure 23 typically is configured to generate stress such as tensilestress in proximity to channel regions 45 within region of semiconductormaterial 11 when device 10 comprises an n-channel device. Stated anotherway, structure 23 is under compressive stress to generate tensile stressin proximity to channel regions 45 within region of semiconductormaterial 11. When device 10 comprises a p-channel device, structure 23is under tensile stress in order to generate a compressive stress inproximity to channel regions 45.

Structures 231 can be formed overlying gate electrodes 28 or inproximity to upper surfaces of gate electrodes 28. Structures 231 areconfigured to generate stress such as tensile stress in proximity tosource ends of channel regions 45. Stated another way, structures 231can be under compressive stress to generate tensile stress in proximityto the source ends of channel regions 45 within region of semiconductormaterial 11. When device 10 comprises a p-channel device, structures 231can be under tensile stress in order to generate a compressive stress inproximity to channel regions 45.

Structures 232 can be formed overlying shield electrodes 21. Structures232 are configured, for example, to generate stress such as tensilestress in proximity to drain ends of channels 45 and in proximity todrift regions 17. Stated another way, structures 232 can be undercompressive stress to generate tensile stress in proximity to the drainends of channel regions 45 and in proximity to drift regions 17 withinregion of semiconductor material 11. When device 10 comprises ap-channel device, structures 232 can be under tensile stress in order togenerate a compressive stress in proximity to the drain ends of channelregions 45 and in proximity to drift regions 17.

Structures 233 can be formed within shield electrodes 21. Structures 233are configured, for example, to generate stress such as tensile stressin proximity the drain ends of channel regions 45 and in proximity todrift regions 17. Stated another way, structures 233 can be undercompressive stress to generate tensile stress in proximity to the drainends of channel regions 45 and in proximity to drift regions 17 withinregion of semiconductor material 11. When device 10 comprises ap-channel device, structures 233 can be under tensile stress in order togenerate a compressive stress in proximity to the drain ends of channelregions 45 and in proximity to drift regions 17.

It is understood that one or more of structures 23, 231, 232, and 233can be used with device 10. In addition, structures 23, 231, 232, and233 can comprise stripe-like shapes. In one embodiment, structures 23and 233 can be rectangular in cross-section with the longest sidesrunning substantially parallel to channel regions 45 and drift regions17 respectively. In other embodiments, the longest sides can runsubstantially perpendicular to channel regions 45. In one embodiment,structures 23 can have a length that is equal to or greater than thelength of channels 45. In one embodiment, structures 23 can have alength that is less than the length of channels 45.

In accordance with the present embodiment, structures 23, 231, 232, and233 increase carrier mobility, which in turn reduces on-resistance fordevice 10. By way of example, simulation results show that suchstructures can reduce on-resistance by at least 5% to 30%. One benefitof structures 23, 231, 232 or/and 233 is that these structures canfacilitate a device active area shrink, which can mean more functionaldevices in a given area or a reduction in the actual chip size.Simulations of these structures suggest active area shrinks of about 5%to 30%.

An interlayer dielectric (ILD), dielectric, or insulator layer 41 isformed overlying major surface 18 and above trench structures 19. In oneembodiment, dielectric layer 41 comprises a silicon oxide and can have athickness from about 0.4 microns to about 1.0 microns. In oneembodiment, dielectric layer 41 comprises a deposited silicon oxidedoped with phosphorous or boron and phosphorous. In one embodiment,dielectric layer 41 can be planarized to provide a more uniform surfacetopography, which improves manufacturability.

Conductive regions or plugs 43 are formed through openings, contacttrenches, or vias in dielectric layer 41 and portions of semiconductorlayer 14 to provide for electrical contact to source regions 33 and bodyregions 31 through contact regions 36. In one embodiment, conductiveregions 43 are conductive plugs or plug structures. In one embodiment,conductive regions 43 comprise a conductive barrier structure or linerplus a conductive fill material. In one embodiment, the barrierstructure includes a metal/metal-nitride configuration such astitanium/titanium-nitride or the like. In another embodiment, thebarrier structure can further include a metal-silicide structure. In oneembodiment, the conductive fill material includes tungsten. In oneembodiment, conductive regions 43 are planarized to provide a moreuniform surface topography.

A conductive layer 44 can be formed overlying major surface 18 and aconductive layer 46 can be formed overlying a surface of semiconductormaterial 11 opposite major surface 18. Conductive layers 44 and 46typically are configured to provide electrical connection between theindividual device components of device 10 and a next level of assembly.In one embodiment, conductive layer 44 istitanium/titanium-nitride/aluminum-copper or the like and is configuredas a source electrode or terminal. In one embodiment, conductive layer46 is a solderable metal structure such as titanium-nickel-silver,chromium-nickel-gold, or the like and is configured as a drain electrodeor terminal. In one embodiment, a further passivation layer (not shown)is formed overlying conductive layer 44. In one embodiment, shieldelectrodes 21 are connected (in another plane) to conductive layer 44 sothat shield electrodes 21 are configured to be at the same potential assource regions 33 when device 10 is in use. In another embodiment,shield electrodes 21 can be configured to be independently biased. In afurther embodiment, a portion of shield electrodes 21 can beelectrically connected to gate electrodes 28.

In one embodiment, the operation of device 10 proceeds as follows.Assume that source electrode (or input terminal) 44 and shieldelectrodes 21 are operating at a potential V_(S) of zero volts, gateelectrodes 28 receive a control voltage V_(G) of 4.5 volts, which isgreater than the conduction threshold of device 10, and drain electrode(or output terminal) 46 operates at a drain potential V_(D) of less than2.0 volts. The values of V_(G) and V_(S) cause body region 31 adjacentto gate electrodes 28 to invert to form channels 45, which electricallyconnect source regions 33 to semiconductor layer 14. A device currentI_(DS) flows from drain electrode 46 and is routed through semiconductorlayer 14, channels 45, and source regions 33 to source electrode 44. Inone embodiment, I_(DS) is on the order of 10.0 amperes. In accordancewith the present embodiment, structures 23, 231, 232, and/or 233propagate stress into region of semiconductor material 11, whichincreases carrier mobility within channels 45 and/or drift regions 17.This in turn reduces on-resistance for device 10. To switch device 10 tothe off state, a control voltage V_(G) of less than the conductionthreshold of device 10 is applied to gate electrodes 28 (e.g., V_(G)<2.5volts). This removes channels 45 and I_(DS) no longer flows throughdevice 10.

FIG. 2 shows a partial cross-sectional view of a semiconductor device 20in accordance with a second embodiment. Device 20 is similar to device10, but includes alternative features or structures configured tocreate, propagate, induce, or generate stress within predeterminedlocations or regions of device 20. Specifically, device 20 can includeone more structures 32, 322, and 323, which can comprise a stressed filmor stress inducing film such as a dielectric film including a siliconnitride, a silicon oxynitride, or a silicon oxide, combinations thereof,or the like. Alternatively, structures 32, 322, and 323 can compriseconductive films such as silicides or metals. Further, such structurecan comprise undoped polysilicon or SIPOS. In one embodiment, structures32, 322, and 323 are placed within less than or equal to about 0.2microns of the region where it is desired the stress be induced.

In this embodiment, structures 32 can be formed within gate electrode 28to induce stress such as tensile stress within channel regions 45.Stated another way, structures 32 can be under compressive stress togenerate tensile stress in proximity to channel regions 45 within regionof semiconductor material 11 when device 20 comprises an n-channeldevice. When device 20 comprises a p-channel device, structures 32 canbe under tensile stress in order to generate a compressive stress inproximity to channel regions 45. By way of example, structures 32 can bea plurality of spaced-apart stripe-like shapes having rectangularcross-sections with the longer sides placed approximately parallel tochannel regions 45. In other embodiments, the longer sides can be placedapproximately perpendicular to channel regions 45. It is understood thatstructures 32 can comprise one or more structures.

Structures 322 can be placed, for example, at lower and outer tipportions of gate electrode 28. Structures 322 are configured or placedto induce or propagate stress such as tensile stress within region ofsemiconductor material 11 (e.g., semiconductor layer 14) in proximity tothe drain-end of channel regions 45 and drift regions 17. Stated anotherway, structures 322 can be under compressive stress to generate tensilestress in proximity to channel regions 45 and in proximity to driftregions 17 when device 20 comprises an n-channel device. When device 20comprises a p-channel device, structures 322 can be under tensile stressin order to generate a compressive stress in proximity to channelregions 45 and in proximity to drift regions 17.

Structures 323 can be placed, for example, within shield electrodes 21,and can be a pair of spaced-apart stripe-like shapes having rectangularcross-sections with the longer sides placed approximately perpendicularto the direction of channel regions 45. In another embodiment, thelonger sides of structures 323 can placed approximately parallel to thedirection of channel regions 45. Structures 322 are configured or placedto induce or propagate stress such as tensile stress within driftregions 17. Stated another way, structures 323 can be under compressivestress to generate tensile stress in proximity to drift regions 17 whendevice 20 comprises an n-channel device. When device 20 comprises ap-channel device, structures 323 can be under tensile stress in order togenerate a compressive stress in proximity to drift regions 17. Inaccordance with the present embodiment, structures 32, 322, and 323increase carrier mobility in the regions under stress, which in turnreduces on-resistance for device 20.

FIG. 3 is a partial cross-sectional view of a device 30 in accordancewith another embodiment. Device 30 is similar to devices 10 and 20.Device 30 further includes structures 334 that can be placed within,adjacent or below conductive structures 43, and are configured or placedto induce stress in proximity to source-ends of channels 45. Structures334 comprise a stressed film or stress inducing film such as dielectricfilms including a silicon nitride, a silicon oxynitride, or a siliconoxide, or undoped polysilicon, SIPOS, or combinations thereof, or thelike. Structures 334 can be used by themselves or together with any ofthe stress-inducing structures described herein. When device 30comprises an n-channel device, structures 334 can be under compressivestress to generate tensile stress in proximity to the source ends ofchannel regions 45. When device 30 comprises a p-channel device,structures 334 can be under tensile stress to generate compressivestress in proximity to the source ends of channel regions 45.

FIG. 4 is a partial cross-sectional view of a device 40 in accordancewith a further embodiment. Device 40 is similar to devices 10 and 20,and further includes composite or multi-layered structures 420 and 430for inducing or propagating stress within various segments of device 40.For example, when device 40 is an n-channel device, structures 420 and430 can be under compressive stress to induce a tensile stress withinthe various segments. Alternatively, when device 40 comprises ap-channel device, structures 420 and 430 can be under tensile stress toinduce a compressive stress within the various segments.

Composite structure 420 can include multiple layers including differentmaterials. For example, composite structure 420 is formed or placedwithin gate electrode 28 to induce stress in proximity to or withinchannel regions 45. In one embodiment, composite structure 420 caninclude a region 422 of one material sandwiched or placed between a pairof regions 421 of different material. For example, region 422 cancomprise an oxide, and regions 421 can comprise a nitride or aconductive material such as a silicide. Alternatively, region 422 cancomprise a nitride and regions 421 can comprise an oxide or a conductivematerial such as a silicide. In an optional embodiment, device 40 caninclude a composite structure 430, which includes a region 432 of onematerial sandwiched or placed between a pair of regions 431 of adifferent material. For example, region 432 can comprise an oxide, andregions 431 can comprise a nitride or a conductive material such as asilicide. Alternatively, region 432 can comprise a nitride and regions431 can comprise an oxide or a conductive material such as a silicide.It is understood that structures 420 and 430 can be rotated. Forexample, they can be rotated 90 degrees from what is shown in FIG. 4.

FIG. 5 is a partial cross-section view of a device 50 in accordance witha still further embodiment. Device 50 is similar to devices 10 and 20.Device 50 includes structures 501 and optionally 511 for inducing stresswithin specific or predetermined locations or parts of device 50. Forexample, when device 50 comprises an n-channel device, structures 501and 511 can be under compressive stress to induce a tensile stresswithin the predetermined locations or parts. Alternatively, when device50 comprises a p-channel device, structures 501 and 511 can be undertensile stress to induce a compressive stress within the specificlocations or parts. In this embodiment, structure 501 can be a “U” likeshape or horseshoe like shape with a base portion 502 and side portions503 extending away from base portion 502. Base portion 502 can bethicker than side portions 503. Structure 501 comprises a stressed filmor stress inducing material such as dielectric films including a siliconnitride, a silicon oxynitride, or a silicon oxide, or undopedpolysilicon, or SIPOS, or combinations thereof, or the like.Alternatively, structure 501 can comprise conductive films such assilicides or metals. Structure 501 is placed within gate electrode 28for inducing stress, for example, in channel regions 45. In oneembodiment, structure 501 can be inverted or rotated 180 degrees fromthe orientation shown in FIG. 5. One further advantage of structure 511is that it can reduce the capacitance between gate electrode 28 andshield electrode 21.

Structure 511 is a stripe-like structure that bisects or passes throughshield electrode 21. Structure 511 comprises materials similar to thosematerials described for structures 233 and 323. Structure 511 can beplaced within shield electrode 21 for inducing stress, for example indrift regions 17. It is understood that structure 501 can be used withinshield electrode 21 as well.

FIGS. 6-8 are partial cross-sectional views of a device 60 at varioussteps of fabrication, which illustrate a method of forming regions 362within source regions 33, which are configured to induce stress withinthe source ends of channels 45. FIG. 6 shows device 60 after a contactopening 61 is formed through ILD layer 41, portions of source regions 33and extends into body region 31. Next, a thermal oxide process can beused to form an insulating layer along exposed portions of the sourceregions 33 and body region 31 as shown in FIG. 7. In one embodiment, awet oxide formed using a temperature from about 825 degrees Celsius toabout 925 degrees Celsius and a time from about 3 minutes to about 10minutes. With this process, the insulating layer is formed having athicker portion 62 in proximity to source regions 33 and a thinnerportion 63 in proximity to body region 31. Thicker portions 62 providean offset for incorporating dopant into body region 31 to formenhancement region 36. The insulating layer can then subsequentlyremoved and conductive region 43 formed within contact opening 61 asshown in FIG. 8. The above described process for forming the insulatinglayer having thicker portions 62 was found to form regions 362 ofelevated stress that beneficially propagates to channel regions 45.Specifically, regions 362 were found to reduce on-resistance by about 3%to about 6%.

FIGS. 9-12 are partial cross-sectional views of a device 90 at varioussteps of fabrication to illustrate a method of forming regions 462within source regions 33, which induce stress within or in proximity tothe source ends of channels 45. FIG. 9 shows device 90 after gateelectrode 28 has been formed. For example, when gate electrode 28comprises doped polysilicon, a silicon recess etch is used to etch thepolysilicon below major surface 18 as shown in FIG. 9. For this step, ahard mask layer 91 can be used while forming gate electrode 28. In oneembodiment, hard mask layer 91 can be non-oxidizing film such a siliconnitride, which is formed overlying a dielectric layer 261. In thisembodiment, dielectric layer 261 can be a silicon oxide.

In a subsequent step and in accordance with this embodiment, the uppersurface of gate electrode 28 and the upper surfaces of the trench areexposed to a wet oxidation process at a temperature between 850 degreesCelsius and 950 degrees Celsius to form dielectric film 410. Dielectricfilm 410 can have a thickness of about 0.075 microns to about 0.35microns or more. Hard mask layer 91 causes dielectric film 410 to formlaterally below hard mask 91 in a “birds-beak” like manner. That is,dielectric film 410 includes portions 411 that overhang portions 418 ofmajor surface 18.

In subsequent steps, body regions 31, source regions 33 and ILD layer 41can be formed as shown in FIG. 11. In one embodiment, ILD layer 41 canbe formed self-aligned to hard mask layer 91. In one embodiment, ILDlayer 41 can be formed and then planarized using hard mask layer 91 as astop-layer. Hard mask layer 91 can then be removed. Further, inaccordance with the present embodiment, an etch such as a silicon etchis used to etch through source regions 33 to body regions 31 for formingbody contact regions 36 as shown in FIG. 12. Portions 411 of dielectricfilm 410 shown in FIG. 10 are configured to overhang and block or maskthe silicon etch, which forms source region 33 into a narrowed orslit-like shape. In one embodiment, a sloped silicon etch is used toform sloped sidewalls 331 of source regions 33 as shown in FIG. 12. Insubsequent steps, conductive layers or plugs 43 can be formed. It wasfound that the wet oxidation process used to form dielectric layer 410including portion 411 together with the sloped silicon etch resulted inthe generation of regions 462 of elevated stress within source regions33. Regions 462 of elevated stress beneficially propagate to channelregions 45, and were found using simulation results to reduceon-resistance by as much as 20%.

FIGS. 13-15 are partial cross-sectional views of a device 100 at earlystages of fabrication. Device 100 is fabricated, for example, to includea feature 423, which is configured to create, propagate, induce, orgenerate stress within predetermined locations or regions of device 100.FIG. 13 shows device 100 at an intermediate step with a dielectric stack379 formed overlying major surface 18 of region of semiconductormaterial 11. At this intermediate step, insulated shield electrodes 21have been formed within lower portions of trenches 22. After insulatorlayers 27 have been formed, a polycrystalline semiconductor layer can bedeposited overlying or adjacent dielectric stack 379, insulator layers26 and insulator layer 27. In one embodiment, the polycrystallinesemiconductor layer can be polysilicon that can be doped in-situ orafter it is deposited. An anistropic etch can then used to form spacerlayers 281 adjacent insulator layers 26 as shown in FIG. 13.

In one embodiment, layers 381 can be formed adjacent spacer layers 281.In one embodiment, layers 381 are configured for inducing stress withinspecific or predetermined locations or parts of device 100. For example,when device 100 comprises an n-channel device, layers 381 can be undercompressive stress to induce a tensile stress within the predeterminedlocations or parts. Alternatively, when device 100 comprises a p-channeldevice, layers 381 can be under tensile stress to induce a compressivestress within the specific locations or parts. Layers 381 can compriseone or materials such as dielectric films including a silicon nitride, asilicon oxynitride, or a silicon oxide, or undoped polysilicon, orSIPOS, or combinations thereof, or the like. In one embodiment, layers381 can comprise a silicide material. In one embodiment, layers 381 canbe omitted.

In a subsequent step, a film or layer that induces stress withinsemiconductor layer 14 of device 100 is formed adjacent layers 381 anddielectric stack 379, and then etched back to form structures 423 asshown in FIG. 14. If layers 381 are used, layers 381 can also be etchedback with structure 423. In one embodiment, structures 423 areconfigured for inducing stress within specific or predeterminedlocations or parts of device 100. For example, when device 100 comprisesan n-channel device, structures 423 can be under compressive stress toinduce a tensile stress within the predetermined locations or parts.Alternatively, when device 100 comprises a p-channel device, structures423 can be under tensile stress to induce a compressive stress withinthe specific locations or parts. In one embodiment, structures 423 cancomprise one or more materials such as dielectric films including asilicon nitride, a silicon oxynitride, or a silicon oxide, or undopedpolysilicon, or SIPOS, or combinations thereof, or the like.Alternatively, structures 423 can comprise conductive films such assilicides or metals.

In a subsequent step, structures 423 (and layers 381) can be furtheretched back to a predetermined location within trenches 22 as shown inFIG. 15. In a subsequent step, conductive portions or regions 282 areformed overlying structure 423, and together with spacer layers 281,conductive portions 282 form gate electrodes 280. Body regions 31 areshown formed within region of semiconductor material 11. In thisembodiment, structures 381 or/and 423 can be configured or placed toinduce stress within channel regions 45 and upper portions of driftregion 17. In one embodiment, structures 423 and layers 381 form afeature for inducing stress that includes a base portion 635 inproximity to the drain end of channel regions 45 and a pair ofprojections or pointed projections 636 that extend away from the baseportion towards major surface 18.

From all of the foregoing, one skilled in the art can determine thataccording to one embodiment a semiconductor device comprises a region ofsemiconductor material having a major surface. A trench controlstructure is formed in the region of semiconductor material including agate dielectric layer formed overlying sidewall surfaces of the trenchcontrol structure and a gate electrode (for example, element 28)comprising a first conductive material formed overlying the gatedielectric layer. A body region is formed within the region ofsemiconductor material and adjacent the trench control structure, wherethe trench control structure is configured to form a channel region (forexample, element 45) within the body region. A source region (forexample, element 33) is formed within the body region has a first sideadjacent the trench control structure and a second side opposite to thefirst side. A first feature (for example, element 23, 32, 322, 421, 422,423, 501) comprising a material other than the first conductive materialis formed within the gate electrode, where the first feature isconfigured to induce stress within portions of the channel region.

Those skilled in the art will also appreciate that according to anotherembodiment, the trench control structure in the device described in thepreceding paragraph further includes a shield electrode (for example,element 21) below the gate electrode, where the shield electrode isseparated from the region of semiconductor material by a dielectriclayer, where a second feature (for example, element 233, 323, 431, 432,511) is formed within the shield electrode, where the second feature isconfigured to induce stress within a drift region of the semiconductordevice.

Those skilled in the art will also appreciate that according to yetanother embodiment, an insulating gate field effect transistor structurehaving enhanced mobility comprises a region of semiconductor materialhaving a first conductivity type, a first major surface, and a secondmajor surface opposing the first major surface, where the region ofsemiconductor material at the second major surface is configured as adrain region. A trench structure is formed within the region ofsemiconductor material comprising a shield electrode (for example,element 21) formed in a lower portion of a trench, where the shieldelectrode is separated from the region of semiconductor material by afirst dielectric layer; a gate electrode (for example, element 28)formed in an upper portion of the trench, wherein the gate electrode isseparated from the region of semiconductor material by a seconddielectric layer and separated from the shield electrode by a thirddielectric layer. A body region having a second conductivity typeopposite to the first conductivity type is formed in the region ofsemiconductor material and adjacent to the trench structure, where thegate electrode is configured to form a channel region (for example,element 45) within the body region. A source region (for example,element 33) of the first conductivity type is formed in spacedrelationship with the body region having a first side adjacent to thetrench structure and a second side opposite to the first side. A firstregion (for example, element 23, 32, 322, 421, 422, 423, 501) is formedwithin the gate electrode and comprising a material that propagatesstress within the region of semiconductor material adjacent to thetrench control structure to provide the enhanced mobility.

Those skilled in the art will also appreciate that according to anadditional embodiment, a method for forming a semiconductor devicecomprises steps of providing a region of semiconductor material having amajor surface, and forming a trench control structure in the region ofsemiconductor material including a gate dielectric layer overlyingsidewall surfaces of the trench control structure, a gate electrode (forexample, element 28) comprising a first conductive material overlyingthe gate dielectric layer, and a first feature (for example, element 23,32, 322, 421, 422, 423, 501) comprising a material other than the firstconductive material within the gate electrode. The method includesforming a body region within the region of semiconductor material andadjacent the trench control structure, where the trench controlstructure is configured to form a channel region (for example, element45) within the body region. The method includes forming a source regionwithin the body region having a first side adjacent the trench controlstructure and a second side opposite to the first side, where the firstfeature is configured to induce stress within portions of the channelregion.

Those skilled in the art will also appreciate that according to afurther embodiment, a method for forming a semiconductor device havingenhanced mobility comprises the steps of providing a semiconductormaterial having a major surface and a drift region, where the device isconfigured as a vertical power semiconductor device. The method includesforming a trench control structure in the region of semiconductormaterial including a gate dielectric layer overlying sidewall surfacesof the trench control structure and a gate electrode comprising a firstconductive material overlying the gate dielectric layer. The methodincludes forming a body region within the region of semiconductormaterial and adjacent the trench control structure, where the trenchcontrol structure is configured to form a channel region (for example,element 45) within the body region, and forming a source region withinthe body region. The method includes forming dielectric features (forexample, element 23, 231, 32, 62, 322, 334, 411, 420, 421, 501) inspaced relationship with the semiconductor material, where thedielectric features form stressed regions that propagate stress inproximity to the channel region.

Those skilled in the art will also appreciate that according to afurther embodiment, the step of forming the dielectric features in themethod described in preceding paragraph comprises the steps of forming acontact trench extending through the source region to form first andsecond source region portions and forming a dielectric layer overlyingexposing sidewall and lower surfaces of the contact trench, where thedielectric layer has thicker portions (for example, element 62)overlying the sidewall surfaces adjoining the first and second sourceregions portions, and where the dielectric features comprise the thickerportions.

Those skilled in the art will also appreciate that according to a stillfurther embodiment, the step of forming the trench control structure cancomprise the steps of forming a hard mask layer (for example, element91) overlying the major surface and having an opening, forming a trenchwithin the semiconductor material through the opening, forming the gatedielectric layer overlying sidewalls of the trench, and forming the gateelectrode recessed within the trench below the major surface. Also,where the step of forming the dielectric features comprises oxidizingupper portions of the sidewalls of the trench using the hard mask layeras an oxidation mask to form the dielectric features (for example,element 411) overlying portions (for example, element 418) of the majorsurface adjacent the trench and below the hard mask layer; and where thestep of forming the source regions comprises forming the source regionswithin the body region in proximity to the dielectric regions and thegate electrode. In addition, the method further comprises the steps offorming contact trenches adjacent the source regions, where the formingthe contact trenches step forms sloped sidewalls (for example, element331) along portions of the source regions, and forming contact layerswithin the contact trenches.

In view of all the above, it is evident that a novel device and methodis disclosed. Included, among other features, is forming one or morestructures in a control structure, contact structures, or currentcarrying regions that propagate stress within certain regions of thedevice to provide the unexpected advantage of improving carrier mobilityand reducing on-resistance. For example, placing a dielectric filmwithin a conductive gate electrode in proximity to a channel region of avertical power MOSFET device increases carrier mobility within thechannel region.

Although the subject matter of the invention has been described andillustrated with reference to specific embodiments thereof, it is notintended that the invention be limited to these illustrativeembodiments. Those skilled in the art will recognize that modificationsand variations can be made without departing from the spirit of theinvention. Therefore, it is intended that this invention encompass allsuch variations and modifications as fall within the scope of theappended claims.

We claim:
 1. A method of forming a semiconductor device comprising:providing a region of semiconductor material having a trench extendingfrom a major surface and having an isolated shield electrode structurein a lower portion of the trench and a gate dielectric layer adjacentsidewalls of the trench; forming conductive spacers adjacent the gatedielectric layer in the trench, the conductive spacers configured aspart of a gate electrode structure; forming a stress inducing structurewithin the trench and interposed between the conductive spacers, whereinthe stress inducing structure and the conductive spacers comprisedifferent materials; and thereafter forming a conductive layer adjacentthe stress inducing layer and interposed between the conductive spacers,the conductive layer configured as another part of the gate electrodestructure.
 2. The method of claim 1 further comprising forming a stressinducing layer along portions of the conductive spacers.
 3. The methodof claim 2, wherein forming the stress inducing layer comprises forminga layer comprising a silicide.
 4. The method of claim 3, wherein formingthe stress inducing structure includes forming a stress inducingstructure comprising a dielectric.
 5. The method of claim 1, whereinforming the conductive spacers comprises: forming a dopedpolycrystalline semiconductor layer; and removing a lower portion of thedoped polycrystalline semiconductor layer adjacent the insulated shieldelectrode to form doped polycrystalline spacers.
 6. The method of claim1, wherein forming the stress inducing structure includes recessing thestress inducing structure within the trench.
 7. The method of claim 1,wherein forming the stress inducing structure includes forming thestress inducing structure comprising a conductive material.
 8. Themethod of claim 1, wherein forming the stress inducing structureincludes forming the stress inducing structure comprising a silicidematerial.
 9. A method for forming an insulating gate field effecttransistor structure having enhanced mobility comprising: providing aregion of semiconductor material having a first conductivity type, afirst major surface, and a second major surface opposing the first majorsurface, where the region of semiconductor material at the second majorsurface is configured as a drain region; providing a trench structurewithin the region of semiconductor material comprising: a shieldelectrode in a lower portion of a trench, where the shield electrode isseparated from the region of semiconductor material by a firstdielectric layer; a gate electrode in an upper portion of the trench,where the gate electrode is separated from the region of semiconductormaterial by a second dielectric layer and separated from the shieldelectrode by a third dielectric layer; and a first region within thegate electrode and comprising a silicide material, wherein the a firstregion within the gate electrode and comprising a silicide material,wherein the first region is recessed within the trench structure so thatno portion of the first region overlaps onto the first major surface anda portion of the first region is provided between the gate electrode andthe shield electrode; providing a body region having a secondconductivity type opposite to the first conductivity type in the regionof semiconductor material, where the body region and the trench regionare adjacent, and where the gate electrode is configured to form achannel region within the body region; and providing a source region ofthe first conductivity type in the body region, the source region havinga first side adjacent to the trench structure and a second side oppositeto the first side, wherein the first region is configured to propagatestress within the region of semiconductor material adjacent to thetrench structure to provide the enhanced mobility.
 10. The method ofclaim 9 further comprising providing a second region within the shieldelectrode and comprising a material configured to propagates stresswithin a drift region of the structure to provide the enhanced mobility.11. The method claim 10, where providing the second region comprisesproviding the second region comprising a silicide.
 12. The method ofclaim 11 further comprising: providing a third region overlying theshield electrode; and providing a fourth region overlying the gateelectrode, wherein both the third and fourth regions comprise a materialconfigured to propagate stress within the region of semiconductormaterial adjacent to the trench structure.
 13. The method of claim 9further comprising a providing second region adjacent to the second sideof the source region and comprising a material that propagates stress inproximity to a source end of the channel region.